a p m 2 3 0 1 c a p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s a p p l i c a t i o n s -20v/-2.8a r ds(on) = 56m w (typ.) @ v gs = -4.5v r ds(on) = 85m w (typ.) @ v gs = -2.5v r ds(on) = 106m w (typ.) @ v gs = -1.8v super high dense cell design reliable and rugged apm2301ca hand ling code temp . range package code package code a : sot-23 operating junction te mp . range c : -55 to 150 c handl ing code tr : tape & reel lead free code l : lead free device blank : original device apm2301ca: c01x xxxxx - da te code lead free code n o t e : l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d i e r i n g o p e r a t i o n s . l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . p ower management in notebook computer, portable equipment and battery powered systems. p channel mosfet sot-23 g s d 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification ty ty d g s
a b s o l u t e m a x i m u m r a t i n g s (t a = 25 c unless otherwise noted) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit v dss drain - source voltage - 20 v gss gate - source voltage 12 v i d * continuous drain current - 2.8 b i dm * 300 m s pulsed drain current v gs = - 4.5 v - 1 2 a i s * diode continuous forward current - 1.3 a t j maxim um junction temperature 150 t stg storage temperature range - 55 to 150 c t a = 25 c 0.83 p d * maximum power dissipation t a =100 c 0. 3 w r q j a * thermal resistance - junction to ambient 1 5 0 c / w notes : *surface mounted on 1in 2 pad area, t 10sec. apm 2 301ca symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a - 20 v v ds = - 16v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c - 30 m a v gs(th) gate thre shold voltage v ds = v gs , i ds = - 250 m a - 0.5 - 0.7 5 - 1 v i gss gate leakage current v gs = 12 v, v ds =0v 10 m a v gs = - 4.5v, i ds = - 2. 8 a 56 7 0 v gs = - 2.5v, i ds = - 2 a 85 1 15 r ds(on) a drain - source on - s tate resistance v gs = - 1.8v, i ds = - 1 a 1 06 165 m w v sd a diode f orward voltage i sd = - 1.3 a, v gs =0v - 0. 75 - 1.3 v gate charge characteristics b q g total gate charge 7 10 q gs gate - source charge 1.9 q gd gate - drain charge v ds = - 10 v, v gs = - 4.5 v, i d s = - 2. 8 a 1. 9 nc 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com a p m 2 3 0 1 c a product specification
e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 2301ca symbol parameter test condition min. typ. max. unit dynamic characteristics b c iss input capacitance 580 c oss output capacitance 100 c rss reverse transfer capacitance v gs =0v, v ds = - 10v, f requency =1.0mhz 75 pf t d(on) turn - on d elay time 4 7 t r turn - on rise time 13 23 t d(off) turn - off delay time 35 63 t f turn - off fall time v dd = - 10v, r l = 1 0 w , i d s = 1 a, v gen = - 4.5v, r g = 6 w 20 36 ns t rr reverse recovery time 20 ns q rr reverse recovery charge i s d = - 2. 8 a , dl sd /dt = 100a/ s 7 n c notes: a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject to production testing . 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com a p m 2 3 0 1 c a product specification
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